Accelerated Testing of High Power Transistors for Long Operation when Solving Problems of Prediction of their Reliability by the Method of Imitation Simulation
When evaluating the individual reliability of semiconductor devices by gradual failures for a given operating time, the value of the electrical parameter of a particular instance for this operating time is predicted using the simulation method. To obtain a prediction of an electrical parameter, it i...
Main Authors: | V. O. Kaziuchyts, E. V. Kalita, S. M. Borovikov, A. I. Berasnevich |
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Format: | Article |
Language: | Russian |
Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2022-06-01
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Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
Subjects: | |
Online Access: | https://doklady.bsuir.by/jour/article/view/3387 |
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