Evolution Application of Two-Dimensional MoS<sub>2</sub>-Based Field-Effect Transistors

Evolution Application of Two-Dimensional MoS<sub>2</sub>-Based Field-Effect Transistors

High-performance and low-power field-effect transistors (FETs) are the basis of integrated circuit fields, which undoubtedly require researchers to find better film channel layer materials and improve device structure technology. MoS<sub>2</sub> has recently shown a special two-dimension...

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Bibliographic Details
Main Authors: Chunlan Wang, Yongle Song, Hao Huang
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Nanomaterials
Subjects:
MoS<sub>2</sub>-FETs
logic and radio-frequency circuits
photodetector
biosensor
piezoelectric devices
synapses transistors
Online Access:https://www.mdpi.com/2079-4991/12/18/3233

Internet

https://www.mdpi.com/2079-4991/12/18/3233

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