Suppression of “volcano” morphology and parasitic defect luminescence in AlGaN-based deep-UV light-emitting diode epitaxy
In this study we overcame several critical growth issues related to epitaxy in AlGaN deep-ultraviolet light-emitting diodes. Irregular-shaped pits with dislocation clusters were observed in micron-thick layers of AlGaN on AlN. The strain-induced morphology and defects were suppressed after the inser...
| المؤلفون الرئيسيون: | , , , , , , , , |
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| التنسيق: | مقال |
| اللغة: | English |
| منشور في: |
Elsevier
2019-06-01
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| سلاسل: | Results in Physics |
| الوصول للمادة أونلاين: | http://www.sciencedirect.com/science/article/pii/S2211379719300373 |