Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters
This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-04-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/5/973 |
| _version_ | 1797599095968235520 |
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| author | Tasso von Windheim Kristin H. Gilchrist Charles B. Parker Stephen Hall James B. Carlson David Stokes Nicholas G. Baldasaro Charles T. Hess Leif Scheick Bernard Rax Brian Stoner Jeffrey T. Glass Jason J. Amsden |
| author_facet | Tasso von Windheim Kristin H. Gilchrist Charles B. Parker Stephen Hall James B. Carlson David Stokes Nicholas G. Baldasaro Charles T. Hess Leif Scheick Bernard Rax Brian Stoner Jeffrey T. Glass Jason J. Amsden |
| author_sort | Tasso von Windheim |
| collection | DOAJ |
| description | This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two parallel vacuum tetrodes fabricated using the polysilicon Multi-User MEMS Processes (polyMUMPs). Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.6 × 10<sup>−9</sup> S as current saturation was not achieved due to a coupling effect between the anode voltage and cathode current. With both tetrodes working in parallel, the NOR logic capabilities were demonstrated. However, the device exhibited asymmetric performance due to differences in the CNT emitter performance in each tetrode. Because vacuum microelectronic devices are attractive for use in high radiation environments, to test the radiation survivability of this device platform, we demonstrated the function of a simplified diode device structure during exposure to gamma radiation at a rate of 45.6 rad(Si)/second. These devices represent a proof-of-concept for a platform that can be used to build intricate vacuum microelectronic logic devices for use in high-radiation environments. |
| first_indexed | 2024-03-11T03:29:34Z |
| format | Article |
| id | doaj.art-f8213e1637c845b1b071314f7c27e258 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T03:29:34Z |
| publishDate | 2023-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-f8213e1637c845b1b071314f7c27e2582023-11-18T02:29:54ZengMDPI AGMicromachines2072-666X2023-04-0114597310.3390/mi14050973Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field EmittersTasso von Windheim0Kristin H. Gilchrist1Charles B. Parker2Stephen Hall3James B. Carlson4David Stokes5Nicholas G. Baldasaro6Charles T. Hess7Leif Scheick8Bernard Rax9Brian Stoner10Jeffrey T. Glass11Jason J. Amsden12Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USARTI International, Research Triangle Park, NC 27709, USADepartment of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USAMicross Advanced Interconnect Technology, Research Triangle Park, NC 27709, USARTI International, Research Triangle Park, NC 27709, USARTI International, Research Triangle Park, NC 27709, USARTI International, Research Triangle Park, NC 27709, USADepartment of Physics, University of Maine, Orono, ME 04469, USAJet Propulsion Laboratory, California Institute of Technology, La Canada Flintridge, CA 91011, USAJet Propulsion Laboratory, California Institute of Technology, La Canada Flintridge, CA 91011, USADepartment of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USADepartment of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USADepartment of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USAThis paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two parallel vacuum tetrodes fabricated using the polysilicon Multi-User MEMS Processes (polyMUMPs). Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.6 × 10<sup>−9</sup> S as current saturation was not achieved due to a coupling effect between the anode voltage and cathode current. With both tetrodes working in parallel, the NOR logic capabilities were demonstrated. However, the device exhibited asymmetric performance due to differences in the CNT emitter performance in each tetrode. Because vacuum microelectronic devices are attractive for use in high radiation environments, to test the radiation survivability of this device platform, we demonstrated the function of a simplified diode device structure during exposure to gamma radiation at a rate of 45.6 rad(Si)/second. These devices represent a proof-of-concept for a platform that can be used to build intricate vacuum microelectronic logic devices for use in high-radiation environments.https://www.mdpi.com/2072-666X/14/5/973carbon nanotubesfield emissionlogic gateMEMSvacuum microelectronics |
| spellingShingle | Tasso von Windheim Kristin H. Gilchrist Charles B. Parker Stephen Hall James B. Carlson David Stokes Nicholas G. Baldasaro Charles T. Hess Leif Scheick Bernard Rax Brian Stoner Jeffrey T. Glass Jason J. Amsden Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters Micromachines carbon nanotubes field emission logic gate MEMS vacuum microelectronics |
| title | Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters |
| title_full | Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters |
| title_fullStr | Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters |
| title_full_unstemmed | Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters |
| title_short | Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters |
| title_sort | proof of concept vacuum microelectronic nor gate fabricated using microelectromechanical systems and carbon nanotube field emitters |
| topic | carbon nanotubes field emission logic gate MEMS vacuum microelectronics |
| url | https://www.mdpi.com/2072-666X/14/5/973 |
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