Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition

Silicon-carbon films are of great interest as diamond-like materials combining unique properties, e.g. high hardness, adhesion to a wide range of materials, abrasion resistance, chemical resistance, low friction coefficient and biocompatibility. The presence of silicon in the films significantly red...

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Main Authors: Alexander A. Temirov, Ilya V. Kubasov, Andrei V. Turutin, Tatiana S. Ilina, Alexander M. Kislyuk, Dmitry A. Kiselev, Elena A. Skryleva, Nikolai A. Sobolev, Igor A. Salimon, Nikolai V. Batrameev, Mikhail D. Malinkovich, Yuri N. Parkhomenko
Format: Article
Language:English
Published: Pensoft Publishers 2023-12-01
Series:Modern Electronic Materials
Online Access:https://moem.pensoft.net/article/116552/download/pdf/
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author Alexander A. Temirov
Ilya V. Kubasov
Andrei V. Turutin
Tatiana S. Ilina
Alexander M. Kislyuk
Dmitry A. Kiselev
Elena A. Skryleva
Nikolai A. Sobolev
Igor A. Salimon
Nikolai V. Batrameev
Mikhail D. Malinkovich
Yuri N. Parkhomenko
author_facet Alexander A. Temirov
Ilya V. Kubasov
Andrei V. Turutin
Tatiana S. Ilina
Alexander M. Kislyuk
Dmitry A. Kiselev
Elena A. Skryleva
Nikolai A. Sobolev
Igor A. Salimon
Nikolai V. Batrameev
Mikhail D. Malinkovich
Yuri N. Parkhomenko
author_sort Alexander A. Temirov
collection DOAJ
description Silicon-carbon films are of great interest as diamond-like materials combining unique properties, e.g. high hardness, adhesion to a wide range of materials, abrasion resistance, chemical resistance, low friction coefficient and biocompatibility. The presence of silicon in the films significantly reduces their inner mechanical stress as compared to diamond films. Currently, the films are used in industry, primarily, as solid lubricants and protective coatings. There are a large number of silicon-carbon film synthesis methods the most widely used of which are various options of chemical vapor deposition. A new silicon-carbon film synthesis technique has been suggested and tested. The technique is based on the use of high-frequency induction for obtaining plasma of silicon and carbon vapors supplied to the reaction chamber from an external source. Impurity-free silicon-carbon films containing 63–65 % carbon atoms with sp3 orbital hybridization have been synthesized on Sitall substrates. The composition, surface roughness and friction coefficient of the impurity-free silicon-carbon films synthesized using the suggested technology have been studied. The possibility of implementing resistive switching in thin silicon-carbon films in cross-bar structures with metallic electrodes has been analyzed.
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spelling doaj.art-f8241751cdc74ed4b0ca17f57999a7272023-12-22T15:29:53ZengPensoft PublishersModern Electronic Materials2452-17792023-12-019417718410.3897/j.moem.9.4.116552116552Synthesis of silicon-carbon films by induction-assisted plasma-chemical depositionAlexander A. Temirov0Ilya V. Kubasov1Andrei V. Turutin2Tatiana S. Ilina3Alexander M. Kislyuk4Dmitry A. Kiselev5Elena A. Skryleva6Nikolai A. Sobolev7Igor A. Salimon8Nikolai V. Batrameev9Mikhail D. Malinkovich10Yuri N. Parkhomenko11National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”Aveiro UniversitySkolkovo Institute of Science and TechnologyJSC "Piezo"National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”Silicon-carbon films are of great interest as diamond-like materials combining unique properties, e.g. high hardness, adhesion to a wide range of materials, abrasion resistance, chemical resistance, low friction coefficient and biocompatibility. The presence of silicon in the films significantly reduces their inner mechanical stress as compared to diamond films. Currently, the films are used in industry, primarily, as solid lubricants and protective coatings. There are a large number of silicon-carbon film synthesis methods the most widely used of which are various options of chemical vapor deposition. A new silicon-carbon film synthesis technique has been suggested and tested. The technique is based on the use of high-frequency induction for obtaining plasma of silicon and carbon vapors supplied to the reaction chamber from an external source. Impurity-free silicon-carbon films containing 63–65 % carbon atoms with sp3 orbital hybridization have been synthesized on Sitall substrates. The composition, surface roughness and friction coefficient of the impurity-free silicon-carbon films synthesized using the suggested technology have been studied. The possibility of implementing resistive switching in thin silicon-carbon films in cross-bar structures with metallic electrodes has been analyzed.https://moem.pensoft.net/article/116552/download/pdf/
spellingShingle Alexander A. Temirov
Ilya V. Kubasov
Andrei V. Turutin
Tatiana S. Ilina
Alexander M. Kislyuk
Dmitry A. Kiselev
Elena A. Skryleva
Nikolai A. Sobolev
Igor A. Salimon
Nikolai V. Batrameev
Mikhail D. Malinkovich
Yuri N. Parkhomenko
Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition
Modern Electronic Materials
title Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition
title_full Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition
title_fullStr Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition
title_full_unstemmed Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition
title_short Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition
title_sort synthesis of silicon carbon films by induction assisted plasma chemical deposition
url https://moem.pensoft.net/article/116552/download/pdf/
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