Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition
Silicon-carbon films are of great interest as diamond-like materials combining unique properties, e.g. high hardness, adhesion to a wide range of materials, abrasion resistance, chemical resistance, low friction coefficient and biocompatibility. The presence of silicon in the films significantly red...
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Pensoft Publishers
2023-12-01
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Series: | Modern Electronic Materials |
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author | Alexander A. Temirov Ilya V. Kubasov Andrei V. Turutin Tatiana S. Ilina Alexander M. Kislyuk Dmitry A. Kiselev Elena A. Skryleva Nikolai A. Sobolev Igor A. Salimon Nikolai V. Batrameev Mikhail D. Malinkovich Yuri N. Parkhomenko |
author_facet | Alexander A. Temirov Ilya V. Kubasov Andrei V. Turutin Tatiana S. Ilina Alexander M. Kislyuk Dmitry A. Kiselev Elena A. Skryleva Nikolai A. Sobolev Igor A. Salimon Nikolai V. Batrameev Mikhail D. Malinkovich Yuri N. Parkhomenko |
author_sort | Alexander A. Temirov |
collection | DOAJ |
description | Silicon-carbon films are of great interest as diamond-like materials combining unique properties, e.g. high hardness, adhesion to a wide range of materials, abrasion resistance, chemical resistance, low friction coefficient and biocompatibility. The presence of silicon in the films significantly reduces their inner mechanical stress as compared to diamond films. Currently, the films are used in industry, primarily, as solid lubricants and protective coatings. There are a large number of silicon-carbon film synthesis methods the most widely used of which are various options of chemical vapor deposition. A new silicon-carbon film synthesis technique has been suggested and tested. The technique is based on the use of high-frequency induction for obtaining plasma of silicon and carbon vapors supplied to the reaction chamber from an external source. Impurity-free silicon-carbon films containing 63–65 % carbon atoms with sp3 orbital hybridization have been synthesized on Sitall substrates. The composition, surface roughness and friction coefficient of the impurity-free silicon-carbon films synthesized using the suggested technology have been studied. The possibility of implementing resistive switching in thin silicon-carbon films in cross-bar structures with metallic electrodes has been analyzed. |
first_indexed | 2024-03-08T20:16:36Z |
format | Article |
id | doaj.art-f8241751cdc74ed4b0ca17f57999a727 |
institution | Directory Open Access Journal |
issn | 2452-1779 |
language | English |
last_indexed | 2024-03-08T20:16:36Z |
publishDate | 2023-12-01 |
publisher | Pensoft Publishers |
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series | Modern Electronic Materials |
spelling | doaj.art-f8241751cdc74ed4b0ca17f57999a7272023-12-22T15:29:53ZengPensoft PublishersModern Electronic Materials2452-17792023-12-019417718410.3897/j.moem.9.4.116552116552Synthesis of silicon-carbon films by induction-assisted plasma-chemical depositionAlexander A. Temirov0Ilya V. Kubasov1Andrei V. Turutin2Tatiana S. Ilina3Alexander M. Kislyuk4Dmitry A. Kiselev5Elena A. Skryleva6Nikolai A. Sobolev7Igor A. Salimon8Nikolai V. Batrameev9Mikhail D. Malinkovich10Yuri N. Parkhomenko11National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”Aveiro UniversitySkolkovo Institute of Science and TechnologyJSC "Piezo"National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”Silicon-carbon films are of great interest as diamond-like materials combining unique properties, e.g. high hardness, adhesion to a wide range of materials, abrasion resistance, chemical resistance, low friction coefficient and biocompatibility. The presence of silicon in the films significantly reduces their inner mechanical stress as compared to diamond films. Currently, the films are used in industry, primarily, as solid lubricants and protective coatings. There are a large number of silicon-carbon film synthesis methods the most widely used of which are various options of chemical vapor deposition. A new silicon-carbon film synthesis technique has been suggested and tested. The technique is based on the use of high-frequency induction for obtaining plasma of silicon and carbon vapors supplied to the reaction chamber from an external source. Impurity-free silicon-carbon films containing 63–65 % carbon atoms with sp3 orbital hybridization have been synthesized on Sitall substrates. The composition, surface roughness and friction coefficient of the impurity-free silicon-carbon films synthesized using the suggested technology have been studied. The possibility of implementing resistive switching in thin silicon-carbon films in cross-bar structures with metallic electrodes has been analyzed.https://moem.pensoft.net/article/116552/download/pdf/ |
spellingShingle | Alexander A. Temirov Ilya V. Kubasov Andrei V. Turutin Tatiana S. Ilina Alexander M. Kislyuk Dmitry A. Kiselev Elena A. Skryleva Nikolai A. Sobolev Igor A. Salimon Nikolai V. Batrameev Mikhail D. Malinkovich Yuri N. Parkhomenko Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition Modern Electronic Materials |
title | Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition |
title_full | Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition |
title_fullStr | Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition |
title_full_unstemmed | Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition |
title_short | Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition |
title_sort | synthesis of silicon carbon films by induction assisted plasma chemical deposition |
url | https://moem.pensoft.net/article/116552/download/pdf/ |
work_keys_str_mv | AT alexanderatemirov synthesisofsiliconcarbonfilmsbyinductionassistedplasmachemicaldeposition AT ilyavkubasov synthesisofsiliconcarbonfilmsbyinductionassistedplasmachemicaldeposition AT andreivturutin synthesisofsiliconcarbonfilmsbyinductionassistedplasmachemicaldeposition AT tatianasilina synthesisofsiliconcarbonfilmsbyinductionassistedplasmachemicaldeposition AT alexandermkislyuk synthesisofsiliconcarbonfilmsbyinductionassistedplasmachemicaldeposition AT dmitryakiselev synthesisofsiliconcarbonfilmsbyinductionassistedplasmachemicaldeposition AT elenaaskryleva synthesisofsiliconcarbonfilmsbyinductionassistedplasmachemicaldeposition AT nikolaiasobolev synthesisofsiliconcarbonfilmsbyinductionassistedplasmachemicaldeposition AT igorasalimon synthesisofsiliconcarbonfilmsbyinductionassistedplasmachemicaldeposition AT nikolaivbatrameev synthesisofsiliconcarbonfilmsbyinductionassistedplasmachemicaldeposition AT mikhaildmalinkovich synthesisofsiliconcarbonfilmsbyinductionassistedplasmachemicaldeposition AT yurinparkhomenko synthesisofsiliconcarbonfilmsbyinductionassistedplasmachemicaldeposition |