Investigation of the influence of graded-gap layer formed by annealing on the electrical properties of the near-surface of LPE HgCdTe using MIS structure
The influence of the near-surface graded-gap layer formed by annealing of HgCdTe grown by liquid phase epitaxy on the capacitance-voltage characteristics of its MIS structure was studied. We found that HgCdTe grown by LPE can form a near-surface graded-gap layer by annealing under specific condition...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
IOP Publishing
2021-01-01
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Series: | Materials Research Express |
Subjects: | |
Online Access: | https://doi.org/10.1088/2053-1591/abda6b |