Investigation of the influence of graded-gap layer formed by annealing on the electrical properties of the near-surface of LPE HgCdTe using MIS structure

Investigation of the influence of graded-gap layer formed by annealing on the electrical properties of the near-surface of LPE HgCdTe using MIS structure

The influence of the near-surface graded-gap layer formed by annealing of HgCdTe grown by liquid phase epitaxy on the capacitance-voltage characteristics of its MIS structure was studied. We found that HgCdTe grown by LPE can form a near-surface graded-gap layer by annealing under specific condition...

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Bibliographic Details
Main Authors: Qi Lu, Xi Wang, Yanfeng Wei, Quanzhi Sun, Chun Lin
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:Materials Research Express
Subjects:
HgCdTe
MIS structure
annealing
graded-gap layer
capacitance–voltage characteristic
Online Access:https://doi.org/10.1088/2053-1591/abda6b

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