Gate-Voltage-Modulated Spin Precession in Graphene/WS<sub>2</sub> Field-Effect Transistors
Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions b...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-11-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/22/2879 |