Forming-Free Tunable Analog Switching in WO<sub>x</sub>/TaO<sub>x</sub> Heterojunction for Emulating Electronic Synapses

Forming-Free Tunable Analog Switching in WO<sub>x</sub>/TaO<sub>x</sub> Heterojunction for Emulating Electronic Synapses

In this work, the sputtered deposited WO<sub>x</sub>/TaO<sub>x</sub> switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling with...

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Bibliographic Details
Main Authors: Chandreswar Mahata, Juyeong Pyo, Beomki Jeon, Muhammad Ismail, Myounggon Kang, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Materials
Subjects:
WO<sub>x</sub>/TaO<sub>x</sub> bilayer
gradual resistive switching
synaptic plasticity
short-term plasticity
long-term potentiation
spike-rate-dependent plasticity
Online Access:https://www.mdpi.com/1996-1944/15/24/8858

Internet

https://www.mdpi.com/1996-1944/15/24/8858

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