Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

Two widely used atomic layer deposition precursors, Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl<sub>4</sub>), were investigated for use in the deposition of TiOx-based thin films as a passivating contact material for solar cells. This study revealed that...

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Bibliographic Details
Main Authors: Vladyslav Matkivskyi, Oskari Leiviskä, Sigurd Wenner, Hanchen Liu, Ville Vähänissi, Hele Savin, Marisa Di Sabatino, Gabriella Tranell
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Materials
Subjects:
atomic layer deposition
titanium oxide
passivation films
ALD precursors
Online Access:https://www.mdpi.com/1996-1944/16/16/5522

Internet

https://www.mdpi.com/1996-1944/16/16/5522

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