Influence of Positive Ion (Al<sup>3+</sup>, Sn<sup>4+</sup>, and Sb<sup>5+</sup>) Doping on the Basic Resistance and Sensing Performances of ZnO Nanoparticles Based Gas Sensors

Influence of Positive Ion (Al<sup>3+</sup>, Sn<sup>4+</sup>, and Sb<sup>5+</sup>) Doping on the Basic Resistance and Sensing Performances of ZnO Nanoparticles Based Gas Sensors

Despite potential advantages of metal oxide semiconductors (MOSs)-based gas sensors, the limitation of very high baseline resistance is still unsatisfactory for practical application. By means of element doping, the performance of metal oxide materials used as gas sensors can be optimized. Herein, d...

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Bibliographic Details
Main Authors: Peng Zhang, Shuang Cao, Ning Sui, Yifeng Xu, Tingting Zhou, Yuan He, Tong Zhang
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Chemosensors
Subjects:
ZnO nanoparticles
doping
gas sensors
acetone
low original resistance
electron compensation
Online Access:https://www.mdpi.com/2227-9040/10/9/364

Internet

https://www.mdpi.com/2227-9040/10/9/364

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