Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure
In this article, an innovative GaN-based trench current-aperture vertical electron transistor (CAVET) with a stepped doping microstructure is proposed and studied using Silvaco-ATLAS. According to the simulation and analyzed characteristics, the best performance renders a remarkable Baliga’s figure...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-08-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/13/8/1273 |