The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs

The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs

In this paper, an integrated device which realized the dual-mode integration of power amplifier (PA) and radio frequency (RF) switch based on GaN dual-gate (DG) structure is designed and fabricated. The integrated device provides two working modes and meets the performance requirements of PA and RF...

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Bibliographic Details
Main Authors: Meng Zhang, Haozheng Wang, Ling Yang, Bin Hou, Mei Wu, Qing Zhu, Minhan Mi, Xu Zou, Chunzhou Shi, Qian Yu, Wenliang Liu, Hao Lu, Xiaohua Ma, Yue Hao
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
nitride
integrated device
power amplifier
RF switch
HEMT
Online Access:https://ieeexplore.ieee.org/document/10356612/

Internet

https://ieeexplore.ieee.org/document/10356612/

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