A <i>Ka</i>-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications
This paper presents a <i>Ka</i>-band three-stage power amplifier for 5G communications, which has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty architecture. The amplifier is made up of a 50 Ω input buffer, which drives a power splitter, thanks to which it deliv...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-08-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/17/3639 |