A <i>Ka</i>-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications
This paper presents a <i>Ka</i>-band three-stage power amplifier for 5G communications, which has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty architecture. The amplifier is made up of a 50 Ω input buffer, which drives a power splitter, thanks to which it deliv...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-08-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/17/3639 |
| _version_ | 1797582706701238272 |
|---|---|
| author | Alessandro Parisi Giuseppe Papotto Claudio Nocera Alessandro Castorina Giuseppe Palmisano |
| author_facet | Alessandro Parisi Giuseppe Papotto Claudio Nocera Alessandro Castorina Giuseppe Palmisano |
| author_sort | Alessandro Parisi |
| collection | DOAJ |
| description | This paper presents a <i>Ka</i>-band three-stage power amplifier for 5G communications, which has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty architecture. The amplifier is made up of a 50 Ω input buffer, which drives a power splitter, thanks to which it delivers its output power to the two power amplifier units of the Doherty topology, namely the main and auxiliary amplifier. Finally, the outputs of the two power amplifiers are properly arranged in a current combining scheme that enables the typical load modulation of the Doherty architecture, alongside allowing power combining at the final output. The proposed amplifier achieves a small signal gain of around 30 dB at 27 GHz, while providing a saturated output power of 32 dBm, with a power-added efficiency (PAE) as high as 26% and 18% at peak and 6 dB output power back-off, respectively. |
| first_indexed | 2024-03-10T23:25:14Z |
| format | Article |
| id | doaj.art-f91a249ee41e42f29288417108a6d830 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T23:25:14Z |
| publishDate | 2023-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-f91a249ee41e42f29288417108a6d8302023-11-19T08:01:59ZengMDPI AGElectronics2079-92922023-08-011217363910.3390/electronics12173639A <i>Ka</i>-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G ApplicationsAlessandro Parisi0Giuseppe Papotto1Claudio Nocera2Alessandro Castorina3Giuseppe Palmisano4STMicroelectronics, 95121 Catania, ItalySTMicroelectronics, 95121 Catania, ItalySTMicroelectronics, 95121 Catania, ItalySTMicroelectronics, 95121 Catania, ItalyDipartimento di Ingegneria Elettrica Elettronica e Informatica (DIEEI), University of Catania, 95125 Catania, ItalyThis paper presents a <i>Ka</i>-band three-stage power amplifier for 5G communications, which has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty architecture. The amplifier is made up of a 50 Ω input buffer, which drives a power splitter, thanks to which it delivers its output power to the two power amplifier units of the Doherty topology, namely the main and auxiliary amplifier. Finally, the outputs of the two power amplifiers are properly arranged in a current combining scheme that enables the typical load modulation of the Doherty architecture, alongside allowing power combining at the final output. The proposed amplifier achieves a small signal gain of around 30 dB at 27 GHz, while providing a saturated output power of 32 dBm, with a power-added efficiency (PAE) as high as 26% and 18% at peak and 6 dB output power back-off, respectively.https://www.mdpi.com/2079-9292/12/17/3639Doherty power amplifierEM simulations5G<i>Ka</i>-bandGaNmm-wave |
| spellingShingle | Alessandro Parisi Giuseppe Papotto Claudio Nocera Alessandro Castorina Giuseppe Palmisano A <i>Ka</i>-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications Electronics Doherty power amplifier EM simulations 5G <i>Ka</i>-band GaN mm-wave |
| title | A <i>Ka</i>-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications |
| title_full | A <i>Ka</i>-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications |
| title_fullStr | A <i>Ka</i>-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications |
| title_full_unstemmed | A <i>Ka</i>-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications |
| title_short | A <i>Ka</i>-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications |
| title_sort | i ka i band doherty power amplifier in a 150 nm gan on sic technology for 5g applications |
| topic | Doherty power amplifier EM simulations 5G <i>Ka</i>-band GaN mm-wave |
| url | https://www.mdpi.com/2079-9292/12/17/3639 |
| work_keys_str_mv | AT alessandroparisi aikaibanddohertypoweramplifierina150nmganonsictechnologyfor5gapplications AT giuseppepapotto aikaibanddohertypoweramplifierina150nmganonsictechnologyfor5gapplications AT claudionocera aikaibanddohertypoweramplifierina150nmganonsictechnologyfor5gapplications AT alessandrocastorina aikaibanddohertypoweramplifierina150nmganonsictechnologyfor5gapplications AT giuseppepalmisano aikaibanddohertypoweramplifierina150nmganonsictechnologyfor5gapplications AT alessandroparisi ikaibanddohertypoweramplifierina150nmganonsictechnologyfor5gapplications AT giuseppepapotto ikaibanddohertypoweramplifierina150nmganonsictechnologyfor5gapplications AT claudionocera ikaibanddohertypoweramplifierina150nmganonsictechnologyfor5gapplications AT alessandrocastorina ikaibanddohertypoweramplifierina150nmganonsictechnologyfor5gapplications AT giuseppepalmisano ikaibanddohertypoweramplifierina150nmganonsictechnologyfor5gapplications |