A <i>Ka</i>-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications

A <i>Ka</i>-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications

This paper presents a <i>Ka</i>-band three-stage power amplifier for 5G communications, which has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty architecture. The amplifier is made up of a 50 Ω input buffer, which drives a power splitter, thanks to which it deliv...

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Bibliographic Details
Main Authors: Alessandro Parisi, Giuseppe Papotto, Claudio Nocera, Alessandro Castorina, Giuseppe Palmisano
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Electronics
Subjects:
Doherty power amplifier
EM simulations
5G
<i>Ka</i>-band
GaN
mm-wave
Online Access:https://www.mdpi.com/2079-9292/12/17/3639

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