Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier
In this paper, an n-i-p-type GaN barrier for the final quantum well, which is closest to the p-type GaN cap layer, is proposed for nitride light-emitting diodes (LEDs) to enhance the confinement of electrons and to improve the efficiency of hole injection. The performances of GaN-based LEDs with a t...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-04-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/13/7/1399 |