Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier
In this paper, an n-i-p-type GaN barrier for the final quantum well, which is closest to the p-type GaN cap layer, is proposed for nitride light-emitting diodes (LEDs) to enhance the confinement of electrons and to improve the efficiency of hole injection. The performances of GaN-based LEDs with a t...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-04-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/13/7/1399 |
| _version_ | 1797212745479749632 |
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| author | Jun Wang Yiman Xu Xiaofei Wang Zuyu Xu Maogao Gong |
| author_facet | Jun Wang Yiman Xu Xiaofei Wang Zuyu Xu Maogao Gong |
| author_sort | Jun Wang |
| collection | DOAJ |
| description | In this paper, an n-i-p-type GaN barrier for the final quantum well, which is closest to the p-type GaN cap layer, is proposed for nitride light-emitting diodes (LEDs) to enhance the confinement of electrons and to improve the efficiency of hole injection. The performances of GaN-based LEDs with a traditional GaN barrier and with our proposed n-i-p GaN barrier were simulated and analyzed in detail. It was observed that, with our newly designed n-i-p GaN barrier, the performances of the LEDs were improved, including a higher light output power, a lower threshold voltage, and a stronger electroluminescence emission intensity. The light output power can be remarkably boosted by 105% at an injection current density of 100 A/cm<sup>2</sup> in comparison with a traditional LED. These improvements originated from the proposed n-i-p GaN barrier, which induces a strong reverse electrostatic field in the n-i-p GaN barrier. This field not only enhances the confinement of electrons but also improves the efficiency of hole injection. |
| first_indexed | 2024-04-24T10:47:16Z |
| format | Article |
| id | doaj.art-f9407de398784095aa20fbb9c20ae454 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-24T10:47:16Z |
| publishDate | 2024-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-f9407de398784095aa20fbb9c20ae4542024-04-12T13:17:34ZengMDPI AGElectronics2079-92922024-04-01137139910.3390/electronics13071399Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum BarrierJun Wang0Yiman Xu1Xiaofei Wang2Zuyu Xu3Maogao Gong4School of Integrated Circuits, Anhui University, Hefei 230601, ChinaSchool of Integrated Circuits, Anhui University, Hefei 230601, ChinaSchool of Integrated Circuits, Anhui University, Hefei 230601, ChinaSchool of Integrated Circuits, Anhui University, Hefei 230601, ChinaSchool of Integrated Circuits, Anhui University, Hefei 230601, ChinaIn this paper, an n-i-p-type GaN barrier for the final quantum well, which is closest to the p-type GaN cap layer, is proposed for nitride light-emitting diodes (LEDs) to enhance the confinement of electrons and to improve the efficiency of hole injection. The performances of GaN-based LEDs with a traditional GaN barrier and with our proposed n-i-p GaN barrier were simulated and analyzed in detail. It was observed that, with our newly designed n-i-p GaN barrier, the performances of the LEDs were improved, including a higher light output power, a lower threshold voltage, and a stronger electroluminescence emission intensity. The light output power can be remarkably boosted by 105% at an injection current density of 100 A/cm<sup>2</sup> in comparison with a traditional LED. These improvements originated from the proposed n-i-p GaN barrier, which induces a strong reverse electrostatic field in the n-i-p GaN barrier. This field not only enhances the confinement of electrons but also improves the efficiency of hole injection.https://www.mdpi.com/2079-9292/13/7/1399GaNquantum wellmodelinglight-emitting diodes |
| spellingShingle | Jun Wang Yiman Xu Xiaofei Wang Zuyu Xu Maogao Gong Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier Electronics GaN quantum well modeling light-emitting diodes |
| title | Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier |
| title_full | Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier |
| title_fullStr | Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier |
| title_full_unstemmed | Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier |
| title_short | Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier |
| title_sort | enhancing the performance of gan based light emitting diodes by incorporating a junction type last quantum barrier |
| topic | GaN quantum well modeling light-emitting diodes |
| url | https://www.mdpi.com/2079-9292/13/7/1399 |
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