Different temperatures leakage mechanisms of (Al2O3)x(HfO2)1−x gate Dielectrics deposited by atomic layer deposition

Different temperatures leakage mechanisms of (Al2O3)x(HfO2)1−x gate Dielectrics deposited by atomic layer deposition

Abstract (Al2O3)x(HfO2)1−x films with varying compositions were deposited on silicon substrates via plasma-enhanced atomic layer deposition (PEALD), and metal-oxide-semiconductor (MOS) capacitors were fabricated. The impact of varying induced Al content on the dielectric properties of HfO2 was exami...

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Bibliographic Details
Main Authors: Yifan Jia, Yi Fu, Xiangtai Liu, Zhan Wang, Pengcheng Jiang, Qin Lu, Shaoqing Wang, Yunhe Guan, Lijun Li, Haifeng Chen, Yue Hao
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Scientific Reports
Subjects:
(Al2O3)x(HfO2)1−x
Plasma-enhanced atomic layer deposition
Leakage mechanisms
XPS characterization
UV spectrophotometer
Online Access:https://doi.org/10.1038/s41598-025-85686-9

Internet

https://doi.org/10.1038/s41598-025-85686-9

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