Field and charge distribution in the junction between n-GaAs and semiinsulating chrome doped substrate
Field and volume charge structure in the junction between semiinsulating chrome doped substrate and n-channel of GaAs MESFET was analyzed by means of a computational modeling. It was used a four-level model of semiinsulating GaAs with deep levels. The obtained results show, that deep acceptor level...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Povolzhskiy State University of Telecommunications & Informatics
2013-03-01
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| Series: | Физика волновых процессов и радиотехнические системы |
| Subjects: | |
| Online Access: | https://journals.ssau.ru/pwp/article/viewFile/7353/7212 |