Field and charge distribution in the junction between n-GaAs and semiinsulating chrome doped substrate

Field and charge distribution in the junction between n-GaAs and semiinsulating chrome doped substrate

Field and volume charge structure in the junction between semiinsulating chrome doped substrate and n-channel of GaAs MESFET was analyzed by means of a computational modeling. It was used a four-level model of semiinsulating GaAs with deep levels. The obtained results show, that deep acceptor level...

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Bibliographic Details
Main Authors: A.M. Bobreshov, Yu.N. Nesterenko, Yu.Yu. Razuvaev
Format: Article
Language:English
Published: Povolzhskiy State University of Telecommunications & Informatics 2013-03-01
Series:Физика волновых процессов и радиотехнические системы
Subjects:
mesfet
gaas
semi-insulating substrate
interface
deep levels
space charge
computational modeling
Online Access:https://journals.ssau.ru/pwp/article/viewFile/7353/7212

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