Process integration and future outlook of 2D transistors

Process integration and future outlook of 2D transistors

The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the recent progress in the fabrication of complementary meta...

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Bibliographic Details
Main Authors: Kevin P. O’Brien, Carl H. Naylor, Chelsey Dorow, Kirby Maxey, Ashish Verma Penumatcha, Andrey Vyatskikh, Ting Zhong, Ande Kitamura, Sudarat Lee, Carly Rogan, Wouter Mortelmans, Mahmut Sami Kavrik, Rachel Steinhardt, Pratyush Buragohain, Sourav Dutta, Tristan Tronic, Scott Clendenning, Paul Fischer, Ernisse S. Putna, Marko Radosavljevic, Matt Metz, Uygar Avci
Format: Article
Language:English
Published: Nature Portfolio 2023-10-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-023-41779-5

Internet

https://doi.org/10.1038/s41467-023-41779-5

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