Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

Abstract The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors (FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation (100 ns) via HZO thickness scaling, electron‐beam‐irradiation (EBI) treatment, and interfacial layer (IL) scavenging. Wi...

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Bibliographic Details
Main Authors: Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Chan Jik Lee, Dae‐Myeong Geum, Young Joon Yoon, Sang Hyeon Kim
Format: Article
Language:English
Published: Wiley-VCH 2024-01-01
Series:Advanced Electronic Materials
Subjects:
electron‐beam‐irradiation
fast read
ferroelectric field‐effect transistor
HfZrOx, interfacial layer scavenging
low operating voltage
thickness scaling
Online Access:https://doi.org/10.1002/aelm.202300327

Internet

https://doi.org/10.1002/aelm.202300327

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