Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics
Abstract The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors (FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation (100 ns) via HZO thickness scaling, electron‐beam‐irradiation (EBI) treatment, and interfacial layer (IL) scavenging. Wi...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-01-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202300327 |
| _version_ | 1797359871293652992 |
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| author | Bong Ho Kim Song‐Hyeon Kuk Seong Kwang Kim Joon Pyo Kim Yoon‐Je Suh Jaeyong Jeong Chan Jik Lee Dae‐Myeong Geum Young Joon Yoon Sang Hyeon Kim |
| author_facet | Bong Ho Kim Song‐Hyeon Kuk Seong Kwang Kim Joon Pyo Kim Yoon‐Je Suh Jaeyong Jeong Chan Jik Lee Dae‐Myeong Geum Young Joon Yoon Sang Hyeon Kim |
| author_sort | Bong Ho Kim |
| collection | DOAJ |
| description | Abstract The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors (FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation (100 ns) via HZO thickness scaling, electron‐beam‐irradiation (EBI) treatment, and interfacial layer (IL) scavenging. With these three strategies, reduced operating voltage, immediate read‐after‐write capability, and improved endurance (>108 cycles) and retention (extrapolated 10‐year) characteristics are achieved in FeFETs. The improved characteristics of FeFETs are attributed to the reduced operating voltage by HZO thickness scaling, the ferroelectric orthorhombic phase‐oriented crystallization by EBI treatment, and the reduced gate voltage drop across the IL and reduced depolarization field by the IL scavenging. It is believed that this work contributes to the development of low‐power and fast‐read FeFETs. |
| first_indexed | 2024-03-08T15:30:03Z |
| format | Article |
| id | doaj.art-f9b6aae35a3049e9b8b5aadcc75f6987 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-08T15:30:03Z |
| publishDate | 2024-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-f9b6aae35a3049e9b8b5aadcc75f69872024-01-10T06:50:59ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-01-01101n/an/a10.1002/aelm.202300327Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention CharacteristicsBong Ho Kim0Song‐Hyeon Kuk1Seong Kwang Kim2Joon Pyo Kim3Yoon‐Je Suh4Jaeyong Jeong5Chan Jik Lee6Dae‐Myeong Geum7Young Joon Yoon8Sang Hyeon Kim9School of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of KoreaSchool of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of KoreaSchool of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of KoreaSchool of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of KoreaSchool of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of KoreaSchool of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of KoreaSchool of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of KoreaSchool of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of KoreaNano Convergence Materials Center Korea Institute of Ceramic Engineering and Technology (KICET) Jinju 52851 Republic of KoreaSchool of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of KoreaAbstract The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors (FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation (100 ns) via HZO thickness scaling, electron‐beam‐irradiation (EBI) treatment, and interfacial layer (IL) scavenging. With these three strategies, reduced operating voltage, immediate read‐after‐write capability, and improved endurance (>108 cycles) and retention (extrapolated 10‐year) characteristics are achieved in FeFETs. The improved characteristics of FeFETs are attributed to the reduced operating voltage by HZO thickness scaling, the ferroelectric orthorhombic phase‐oriented crystallization by EBI treatment, and the reduced gate voltage drop across the IL and reduced depolarization field by the IL scavenging. It is believed that this work contributes to the development of low‐power and fast‐read FeFETs.https://doi.org/10.1002/aelm.202300327electron‐beam‐irradiationfast readferroelectric field‐effect transistorHfZrOx, interfacial layer scavenginglow operating voltagethickness scaling |
| spellingShingle | Bong Ho Kim Song‐Hyeon Kuk Seong Kwang Kim Joon Pyo Kim Yoon‐Je Suh Jaeyong Jeong Chan Jik Lee Dae‐Myeong Geum Young Joon Yoon Sang Hyeon Kim Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics Advanced Electronic Materials electron‐beam‐irradiation fast read ferroelectric field‐effect transistor HfZrOx, interfacial layer scavenging low operating voltage thickness scaling |
| title | Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics |
| title_full | Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics |
| title_fullStr | Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics |
| title_full_unstemmed | Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics |
| title_short | Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics |
| title_sort | low operating voltage and immediate read after write of hzo based si ferroelectric field effect transistors with high endurance and retention characteristics |
| topic | electron‐beam‐irradiation fast read ferroelectric field‐effect transistor HfZrOx, interfacial layer scavenging low operating voltage thickness scaling |
| url | https://doi.org/10.1002/aelm.202300327 |
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