Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments

Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments

Abstract InGaZnO (IGZO) thin‐film transistors (TFTs) have gained widespread use in active matrix (AM) displays due to their decent field‐effect mobility and low off current. However, the wide bandgap of IGZO limits their application in visible light detection. This study presents an industry process...

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Bibliographic Details
Main Authors: Xindi Xu, Meng Zhang, Yuyang Yang, Lei Lu, Feng Lin, Man Wong, Hoi‐Sing Kwok
Format: Article
Language:English
Published: Wiley-VCH 2023-10-01
Series:Advanced Electronic Materials
Subjects:
InGaZnO
nitrogen treatment
thin‐film transistors
visible‐light detection
Online Access:https://doi.org/10.1002/aelm.202300351

Internet

https://doi.org/10.1002/aelm.202300351

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