Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments
Abstract InGaZnO (IGZO) thin‐film transistors (TFTs) have gained widespread use in active matrix (AM) displays due to their decent field‐effect mobility and low off current. However, the wide bandgap of IGZO limits their application in visible light detection. This study presents an industry process...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Wiley-VCH
2023-10-01
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Series: | Advanced Electronic Materials |
Subjects: | |
Online Access: | https://doi.org/10.1002/aelm.202300351 |