Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments
Abstract InGaZnO (IGZO) thin‐film transistors (TFTs) have gained widespread use in active matrix (AM) displays due to their decent field‐effect mobility and low off current. However, the wide bandgap of IGZO limits their application in visible light detection. This study presents an industry process...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-10-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300351 |
| _version_ | 1827796484246994944 |
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| author | Xindi Xu Meng Zhang Yuyang Yang Lei Lu Feng Lin Man Wong Hoi‐Sing Kwok |
| author_facet | Xindi Xu Meng Zhang Yuyang Yang Lei Lu Feng Lin Man Wong Hoi‐Sing Kwok |
| author_sort | Xindi Xu |
| collection | DOAJ |
| description | Abstract InGaZnO (IGZO) thin‐film transistors (TFTs) have gained widespread use in active matrix (AM) displays due to their decent field‐effect mobility and low off current. However, the wide bandgap of IGZO limits their application in visible light detection. This study presents an industry process‐compatible method to achieve visible light detection in IGZO TFTs through N2 treatment during the sputtering and annealing process for the first time. A comparison with control IGZO TFTs shows that the N2‐treated IGZO TFTs exhibit a high responsivity of 0.66 A W−1 and detectivity of 5.40 × 1014 Jones for visible light detection. Based on X‐ray photoelectron spectroscopy analysis and technology computer‐aided design simulations, a model, focusing on oxygen vacancy modulation, is proposed to explain the visible‐light sensitivity in IGZO TFTs with N2 treatment. This work opens up new possibilities for the integration of IGZO photodetector into AM display panels to realize in‐cell environmental detection and biometric recognition. |
| first_indexed | 2024-03-11T19:07:48Z |
| format | Article |
| id | doaj.art-f9e23cdb90334fc393e8ff97c5b53a5e |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T19:07:48Z |
| publishDate | 2023-10-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-f9e23cdb90334fc393e8ff97c5b53a5e2023-10-10T05:50:40ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-10-01910n/an/a10.1002/aelm.202300351Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 TreatmentsXindi Xu0Meng Zhang1Yuyang Yang2Lei Lu3Feng Lin4Man Wong5Hoi‐Sing Kwok6Institute of Microscale Optoelectronics (IMO) Shenzhen University Shenzhen 518060 P. R. ChinaCollege of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. ChinaCollege of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. ChinaSchool of Electronic and Computer Engineering Shenzhen Graduate School Peking University Shenzhen 518055 P. R. ChinaShenzhen Fortsense Co., Ltd Shenzhen 518055 P. R. ChinaState Key Laboratory of Advanced Displays and Optoelectronics Technologies The Hong Kong University of Science and Technology Hong KongState Key Laboratory of Advanced Displays and Optoelectronics Technologies The Hong Kong University of Science and Technology Hong KongAbstract InGaZnO (IGZO) thin‐film transistors (TFTs) have gained widespread use in active matrix (AM) displays due to their decent field‐effect mobility and low off current. However, the wide bandgap of IGZO limits their application in visible light detection. This study presents an industry process‐compatible method to achieve visible light detection in IGZO TFTs through N2 treatment during the sputtering and annealing process for the first time. A comparison with control IGZO TFTs shows that the N2‐treated IGZO TFTs exhibit a high responsivity of 0.66 A W−1 and detectivity of 5.40 × 1014 Jones for visible light detection. Based on X‐ray photoelectron spectroscopy analysis and technology computer‐aided design simulations, a model, focusing on oxygen vacancy modulation, is proposed to explain the visible‐light sensitivity in IGZO TFTs with N2 treatment. This work opens up new possibilities for the integration of IGZO photodetector into AM display panels to realize in‐cell environmental detection and biometric recognition.https://doi.org/10.1002/aelm.202300351InGaZnOnitrogen treatmentthin‐film transistorsvisible‐light detection |
| spellingShingle | Xindi Xu Meng Zhang Yuyang Yang Lei Lu Feng Lin Man Wong Hoi‐Sing Kwok Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments Advanced Electronic Materials InGaZnO nitrogen treatment thin‐film transistors visible‐light detection |
| title | Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments |
| title_full | Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments |
| title_fullStr | Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments |
| title_full_unstemmed | Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments |
| title_short | Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments |
| title_sort | realization of visible light detection in ingazno thin film transistor via oxygen vacancy modulation through n2 treatments |
| topic | InGaZnO nitrogen treatment thin‐film transistors visible‐light detection |
| url | https://doi.org/10.1002/aelm.202300351 |
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