Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite

Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite

Ferroelectric materials attract much attention for applications in resistive memory devices due to the large current difference between insulating and conductive states and the ability of carefully controlling electronic transport via the polarization set-up. Bismuth ferrite films are of special int...

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Bibliographic Details
Main Authors: Alexander Abramov, Boris Slautin, Victoria Pryakhina, Vladimir Shur, Andrei Kholkin, Denis Alikin
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Sensors
Subjects:
scanning probe microscopy
CAFM
defects
leakage current
local switching
polarization reversal
Online Access:https://www.mdpi.com/1424-8220/23/1/526

Internet

https://www.mdpi.com/1424-8220/23/1/526

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