Influence of ionic bombardment on cubic boron nitride (c-BN) thin film deposition by r. f. magnetron sputtering

Influence of ionic bombardment on cubic boron nitride (c-BN) thin film deposition by r. f. magnetron sputtering

Thin films of cubic Boron Nitride (c-BN) were deposited by d. c. and r. f. (13,56 MHz) multi-target magnetron sputtering from high-purity (99,99 %) hexagonal boron nitride (h-BN) target, in an Ar (95%)-N2 (5%) gas mixture. Films were deposited at 300 and 900 oC, with power density of 7 and 24 W/cm2...

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Bibliographic Details
Main Authors: Gilberto Bejarano Gaitán, José Manuel Roque Caicedo, Pedro Prieto Pulido, Gustavo Zambrano, Eval Baca Miranda
Format: Article
Language:English
Published: Universidad de Antioquia 2006-08-01
Series:Revista Facultad de Ingeniería Universidad de Antioquia
Subjects:
magnetron sputtering
cubic boron nitride
ion bombardment
Online Access:https://revistas.udea.edu.co/index.php/ingenieria/article/view/343466

Internet

https://revistas.udea.edu.co/index.php/ingenieria/article/view/343466

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