Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers
The direct growth of III–V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations (TDs), antiphase boundaries (APBs), and thermal cracks, significa...
| Hlavní autoři: | , , , , , , |
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| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
AIP Publishing LLC
2024-03-01
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| Edice: | AIP Advances |
| On-line přístup: | http://dx.doi.org/10.1063/5.0194230 |