Single-Particle Irradiation Effect and Anti-Irradiation Optimization of a JLTFET with Lightly Doped Source

Single-Particle Irradiation Effect and Anti-Irradiation Optimization of a JLTFET with Lightly Doped Source

In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. In the irradiation phenomenon, heavy ion produces a series of electron-hole pairs along the incident track, and then the gen...

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Bibliographic Details
Main Authors: Haiwu Xie, Hongxia Liu
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Micromachines
Subjects:
band-to-band tunneling (BTBT)
linear energy transfer value (LET)
single-particle irradiation effect
anti-irradiation optimization
Online Access:https://www.mdpi.com/2072-666X/14/7/1413

Internet

https://www.mdpi.com/2072-666X/14/7/1413

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