Analytical Approach to Improve the Performance of a Fully Integrated Class-F Power Amplifier with 0.13 µm BiCMOS Technology Using Drain–Bulk Capacitor Modulation

Analytical Approach to Improve the Performance of a Fully Integrated Class-F Power Amplifier with 0.13 µm BiCMOS Technology Using Drain–Bulk Capacitor Modulation

This article reports a novel technique based on drain–bulk capacitor modulation to improve the performance design of a class-F power amplifier (PA) used in low-power transceivers based on the I-Q amplitude modulation technique considering linearity–efficiency–miniaturization trade-offs. This idea is...

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Bibliographic Details
Main Authors: Smail Traiche, Mohamed Trabelsi, Ali Bououden, Mustapha C. E. Yagoub
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Electronics
Subjects:
BiCMOS 0.13 μm
class-F power amplifier
power-added efficiency
harmonic networks
signal shaping
Online Access:https://www.mdpi.com/2079-9292/12/13/2784

Internet

https://www.mdpi.com/2079-9292/12/13/2784

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