Role of inserting an InGaN strain release interlayer in AlGaN growth
AlGaN grown on a GaN template usually suffers tensile stress, and the accumulated tensile stress may cause formation of cracks. In this paper, a method to reduce the tensile stress during AlGaN growth by inserting an InGaN interlayer is proposed. Although InGaN has a larger in-plane lattice constant...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-08-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723005090 |