Role of inserting an InGaN strain release interlayer in AlGaN growth
AlGaN grown on a GaN template usually suffers tensile stress, and the accumulated tensile stress may cause formation of cracks. In this paper, a method to reduce the tensile stress during AlGaN growth by inserting an InGaN interlayer is proposed. Although InGaN has a larger in-plane lattice constant...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-08-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723005090 |
| _version_ | 1797755042267136000 |
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| author | Zhenzhuo Zhang Jing Yang Feng Liang Yufei Hou Zongshun Liu Degang Zhao |
| author_facet | Zhenzhuo Zhang Jing Yang Feng Liang Yufei Hou Zongshun Liu Degang Zhao |
| author_sort | Zhenzhuo Zhang |
| collection | DOAJ |
| description | AlGaN grown on a GaN template usually suffers tensile stress, and the accumulated tensile stress may cause formation of cracks. In this paper, a method to reduce the tensile stress during AlGaN growth by inserting an InGaN interlayer is proposed. Although InGaN has a larger in-plane lattice constant, it will not cause the subsequent growth of AlGaN to be subject to greater tensile stress if InGaN is coherently grown on AlGaN. On the contrary, due to the low thermal expansion coefficient of InGaN, the subsequent growth of AlGaN will suffer less tensile stress through an asymmetric temperature varying process. The validity of this method was verified by in-situ curvature monitor, reciprocal space mapping and temperature-dependent Raman spectral observation. In addition, it is found by atomic force microscopy and scanning electron microscopy that the insertion of InGaN interlayer introduces V-shaped pits into the AlGaN structure which can be refilled by later AlGaN growth. It is inferred that they may play additional role in stress release similar to what the patterned substrate usually does. |
| first_indexed | 2024-03-12T17:42:13Z |
| format | Article |
| id | doaj.art-faea6a9c9c264418b735b37bb9f7e698 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-03-12T17:42:13Z |
| publishDate | 2023-08-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-faea6a9c9c264418b735b37bb9f7e6982023-08-04T05:47:23ZengElsevierResults in Physics2211-37972023-08-0151106716Role of inserting an InGaN strain release interlayer in AlGaN growthZhenzhuo Zhang0Jing Yang1Feng Liang2Yufei Hou3Zongshun Liu4Degang Zhao5State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China; Corresponding author.State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaAlGaN grown on a GaN template usually suffers tensile stress, and the accumulated tensile stress may cause formation of cracks. In this paper, a method to reduce the tensile stress during AlGaN growth by inserting an InGaN interlayer is proposed. Although InGaN has a larger in-plane lattice constant, it will not cause the subsequent growth of AlGaN to be subject to greater tensile stress if InGaN is coherently grown on AlGaN. On the contrary, due to the low thermal expansion coefficient of InGaN, the subsequent growth of AlGaN will suffer less tensile stress through an asymmetric temperature varying process. The validity of this method was verified by in-situ curvature monitor, reciprocal space mapping and temperature-dependent Raman spectral observation. In addition, it is found by atomic force microscopy and scanning electron microscopy that the insertion of InGaN interlayer introduces V-shaped pits into the AlGaN structure which can be refilled by later AlGaN growth. It is inferred that they may play additional role in stress release similar to what the patterned substrate usually does.http://www.sciencedirect.com/science/article/pii/S2211379723005090AlGaN growthMOCVDStress modulationInGaN interlayer |
| spellingShingle | Zhenzhuo Zhang Jing Yang Feng Liang Yufei Hou Zongshun Liu Degang Zhao Role of inserting an InGaN strain release interlayer in AlGaN growth Results in Physics AlGaN growth MOCVD Stress modulation InGaN interlayer |
| title | Role of inserting an InGaN strain release interlayer in AlGaN growth |
| title_full | Role of inserting an InGaN strain release interlayer in AlGaN growth |
| title_fullStr | Role of inserting an InGaN strain release interlayer in AlGaN growth |
| title_full_unstemmed | Role of inserting an InGaN strain release interlayer in AlGaN growth |
| title_short | Role of inserting an InGaN strain release interlayer in AlGaN growth |
| title_sort | role of inserting an ingan strain release interlayer in algan growth |
| topic | AlGaN growth MOCVD Stress modulation InGaN interlayer |
| url | http://www.sciencedirect.com/science/article/pii/S2211379723005090 |
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