Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique propert...

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Bibliographic Details
Main Authors: Tristan Smołka, Katarzyna Posmyk, Maja Wasiluk, Paweł Wyborski, Michał Gawełczyk, Paweł Mrowiński, Monika Mikulicz, Agata Zielińska, Johann Peter Reithmaier, Anna Musiał, Mohamed Benyoucef
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Materials
Subjects:
MBE growth
symmetric InAs/InP quantum dots
3rd telecom window
internal quantum efficiency
carrier dynamics
thermal stability of emission
Online Access:https://www.mdpi.com/1996-1944/14/21/6270

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https://www.mdpi.com/1996-1944/14/21/6270

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