Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy
We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique propert...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-10-01
|
| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/14/21/6270 |
| _version_ | 1797512258444591104 |
|---|---|
| author | Tristan Smołka Katarzyna Posmyk Maja Wasiluk Paweł Wyborski Michał Gawełczyk Paweł Mrowiński Monika Mikulicz Agata Zielińska Johann Peter Reithmaier Anna Musiał Mohamed Benyoucef |
| author_facet | Tristan Smołka Katarzyna Posmyk Maja Wasiluk Paweł Wyborski Michał Gawełczyk Paweł Mrowiński Monika Mikulicz Agata Zielińska Johann Peter Reithmaier Anna Musiał Mohamed Benyoucef |
| author_sort | Tristan Smołka |
| collection | DOAJ |
| description | We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting. |
| first_indexed | 2024-03-10T05:59:17Z |
| format | Article |
| id | doaj.art-faf175fd0ff64589b5305e192e1140ae |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T05:59:17Z |
| publishDate | 2021-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-faf175fd0ff64589b5305e192e1140ae2023-11-22T21:09:36ZengMDPI AGMaterials1996-19442021-10-011421627010.3390/ma14216270Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam EpitaxyTristan Smołka0Katarzyna Posmyk1Maja Wasiluk2Paweł Wyborski3Michał Gawełczyk4Paweł Mrowiński5Monika Mikulicz6Agata Zielińska7Johann Peter Reithmaier8Anna Musiał9Mohamed Benyoucef10Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandDepartment of Theoretical Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandCenter for Interdisciplinary Nanostructure Science and Technology (CINSaT), Institute of Nanostructure Technologies and Analytics (INA), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, GermanyLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandCenter for Interdisciplinary Nanostructure Science and Technology (CINSaT), Institute of Nanostructure Technologies and Analytics (INA), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, GermanyWe present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.https://www.mdpi.com/1996-1944/14/21/6270MBE growthsymmetric InAs/InP quantum dots3rd telecom windowinternal quantum efficiencycarrier dynamicsthermal stability of emission |
| spellingShingle | Tristan Smołka Katarzyna Posmyk Maja Wasiluk Paweł Wyborski Michał Gawełczyk Paweł Mrowiński Monika Mikulicz Agata Zielińska Johann Peter Reithmaier Anna Musiał Mohamed Benyoucef Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy Materials MBE growth symmetric InAs/InP quantum dots 3rd telecom window internal quantum efficiency carrier dynamics thermal stability of emission |
| title | Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy |
| title_full | Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy |
| title_fullStr | Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy |
| title_full_unstemmed | Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy |
| title_short | Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy |
| title_sort | optical quality of inas inp quantum dots on distributed bragg reflector emitting at 3rd telecom window grown by molecular beam epitaxy |
| topic | MBE growth symmetric InAs/InP quantum dots 3rd telecom window internal quantum efficiency carrier dynamics thermal stability of emission |
| url | https://www.mdpi.com/1996-1944/14/21/6270 |
| work_keys_str_mv | AT tristansmołka opticalqualityofinasinpquantumdotsondistributedbraggreflectoremittingat3rdtelecomwindowgrownbymolecularbeamepitaxy AT katarzynaposmyk opticalqualityofinasinpquantumdotsondistributedbraggreflectoremittingat3rdtelecomwindowgrownbymolecularbeamepitaxy AT majawasiluk opticalqualityofinasinpquantumdotsondistributedbraggreflectoremittingat3rdtelecomwindowgrownbymolecularbeamepitaxy AT pawełwyborski opticalqualityofinasinpquantumdotsondistributedbraggreflectoremittingat3rdtelecomwindowgrownbymolecularbeamepitaxy AT michałgawełczyk opticalqualityofinasinpquantumdotsondistributedbraggreflectoremittingat3rdtelecomwindowgrownbymolecularbeamepitaxy AT pawełmrowinski opticalqualityofinasinpquantumdotsondistributedbraggreflectoremittingat3rdtelecomwindowgrownbymolecularbeamepitaxy AT monikamikulicz opticalqualityofinasinpquantumdotsondistributedbraggreflectoremittingat3rdtelecomwindowgrownbymolecularbeamepitaxy AT agatazielinska opticalqualityofinasinpquantumdotsondistributedbraggreflectoremittingat3rdtelecomwindowgrownbymolecularbeamepitaxy AT johannpeterreithmaier opticalqualityofinasinpquantumdotsondistributedbraggreflectoremittingat3rdtelecomwindowgrownbymolecularbeamepitaxy AT annamusiał opticalqualityofinasinpquantumdotsondistributedbraggreflectoremittingat3rdtelecomwindowgrownbymolecularbeamepitaxy AT mohamedbenyoucef opticalqualityofinasinpquantumdotsondistributedbraggreflectoremittingat3rdtelecomwindowgrownbymolecularbeamepitaxy |