Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer
We report the effect of zirconium oxide (ZrO2) layers on the electrical characteristics of multilayered tin disulfide (SnS2) formed by atomic layer deposition (ALD) at low temperatures. SnS2 is a two-dimensional (2D) layered material which exhibits a promising electrical characteristics as a channel...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-02-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4977887 |