Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer

Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer

We report the effect of zirconium oxide (ZrO2) layers on the electrical characteristics of multilayered tin disulfide (SnS2) formed by atomic layer deposition (ALD) at low temperatures. SnS2 is a two-dimensional (2D) layered material which exhibits a promising electrical characteristics as a channel...

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Bibliographic Details
Main Authors:	Juhyun Lee, Jeongsu Lee, Giyul Ham, Seokyoon Shin, Joohyun Park, Hyeongsu Choi, Seungjin Lee, Juyoung Kim, Onejae Sul, Seungbeck Lee, Hyeongtag Jeon
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2017-02-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4977887

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