Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures

Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures

This work deals with elastically strained GeSiSn films and GeSiSn islands. The kinetic diagram of GeSiSn growth for different lattice mismatches between GeSiSn and Si has been drawn. The multilayered periodic structures with pseudomorphic GeSiSn layers and GeSiSn island arrays have been obtained. Th...

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Bibliographic Details
Main Authors: Vyacheslav A. Timofeev, Alexandr I. Nikiforov, Artur R. Tuktamyshev, Aleksey A. Bloshkin, Vladimir I. Mashanov, Sergey A. Teys, Ivan D. Loshkarev, Natalia A. Baidakova
Format: Article
Language:English
Published: Pensoft Publishers 2017-06-01
Series:Modern Electronic Materials
Subjects:
GeSiSn
Nanoislands
Epitaxy
Diffraction
Scanning tunnel microscopy
X-ray diffractometry, Photoluminescence
Band diagram
Online Access:http://www.sciencedirect.com/science/article/pii/S2452177917300610

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http://www.sciencedirect.com/science/article/pii/S2452177917300610

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