Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
This work deals with elastically strained GeSiSn films and GeSiSn islands. The kinetic diagram of GeSiSn growth for different lattice mismatches between GeSiSn and Si has been drawn. The multilayered periodic structures with pseudomorphic GeSiSn layers and GeSiSn island arrays have been obtained. Th...
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Pensoft Publishers
2017-06-01
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| Series: | Modern Electronic Materials |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177917300610 |
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| author | Vyacheslav A. Timofeev Alexandr I. Nikiforov Artur R. Tuktamyshev Aleksey A. Bloshkin Vladimir I. Mashanov Sergey A. Teys Ivan D. Loshkarev Natalia A. Baidakova |
| author_facet | Vyacheslav A. Timofeev Alexandr I. Nikiforov Artur R. Tuktamyshev Aleksey A. Bloshkin Vladimir I. Mashanov Sergey A. Teys Ivan D. Loshkarev Natalia A. Baidakova |
| author_sort | Vyacheslav A. Timofeev |
| collection | DOAJ |
| description | This work deals with elastically strained GeSiSn films and GeSiSn islands. The kinetic diagram of GeSiSn growth for different lattice mismatches between GeSiSn and Si has been drawn. The multilayered periodic structures with pseudomorphic GeSiSn layers and GeSiSn island arrays have been obtained. The density of the islands in the GeSiSn layer is 1.8 · 1012 cm-2 for an average island size of 4 nm. Analysis of the rocking curves has shown that the structures contain smooth heterointerfaces, and no abrupt changes of composition and thickness between periods have been found. Photoluminescence has been demonstrated and calculation of band diagram with the model-solid theory has been carried out. Luminescence presented for sample with pseudomorphic Ge0.315Si0.65Sn0.035 layers in the narrow range 0.71–0.82 eV is observed with the maximum intensity near 0.78 eV corresponding to 1.59 µm wavelength. Based on the band diagram calculation for Si/Ge0.315Si0.65Sn0.035/Si heterocomposition we have concluded that 0.78 eV photon energy luminescence corresponds to interband transitions between the X-valley in Si and the heavy hole subband in the Ge0.315Si0.65Sn0.035 layer. |
| first_indexed | 2024-03-12T08:08:23Z |
| format | Article |
| id | doaj.art-fb183be9c0f041b18514110729a4f7a5 |
| institution | Directory Open Access Journal |
| issn | 2452-1779 |
| language | English |
| last_indexed | 2024-03-12T08:08:23Z |
| publishDate | 2017-06-01 |
| publisher | Pensoft Publishers |
| record_format | Article |
| series | Modern Electronic Materials |
| spelling | doaj.art-fb183be9c0f041b18514110729a4f7a52023-09-02T19:20:34ZengPensoft PublishersModern Electronic Materials2452-17792017-06-0132869010.1016/j.moem.2017.09.006Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structuresVyacheslav A. Timofeev0Alexandr I. Nikiforov1Artur R. Tuktamyshev2Aleksey A. Bloshkin3Vladimir I. Mashanov4Sergey A. Teys5Ivan D. Loshkarev6Natalia A. Baidakova7Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Ac. Lavrentiev Ave, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Ac. Lavrentiev Ave, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Ac. Lavrentiev Ave, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Ac. Lavrentiev Ave, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Ac. Lavrentiev Ave, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Ac. Lavrentiev Ave, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Ac. Lavrentiev Ave, Novosibirsk 630090, RussiaInstitute for Physics of Microstructures, Russian Academy of Sciences, 7 Academicheskaya Str., Afonino, Nizhny Novgorod region, Kstovsky 603087, RussiaThis work deals with elastically strained GeSiSn films and GeSiSn islands. The kinetic diagram of GeSiSn growth for different lattice mismatches between GeSiSn and Si has been drawn. The multilayered periodic structures with pseudomorphic GeSiSn layers and GeSiSn island arrays have been obtained. The density of the islands in the GeSiSn layer is 1.8 · 1012 cm-2 for an average island size of 4 nm. Analysis of the rocking curves has shown that the structures contain smooth heterointerfaces, and no abrupt changes of composition and thickness between periods have been found. Photoluminescence has been demonstrated and calculation of band diagram with the model-solid theory has been carried out. Luminescence presented for sample with pseudomorphic Ge0.315Si0.65Sn0.035 layers in the narrow range 0.71–0.82 eV is observed with the maximum intensity near 0.78 eV corresponding to 1.59 µm wavelength. Based on the band diagram calculation for Si/Ge0.315Si0.65Sn0.035/Si heterocomposition we have concluded that 0.78 eV photon energy luminescence corresponds to interband transitions between the X-valley in Si and the heavy hole subband in the Ge0.315Si0.65Sn0.035 layer.http://www.sciencedirect.com/science/article/pii/S2452177917300610GeSiSnNanoislandsEpitaxyDiffractionScanning tunnel microscopyX-ray diffractometry, PhotoluminescenceBand diagram |
| spellingShingle | Vyacheslav A. Timofeev Alexandr I. Nikiforov Artur R. Tuktamyshev Aleksey A. Bloshkin Vladimir I. Mashanov Sergey A. Teys Ivan D. Loshkarev Natalia A. Baidakova Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures Modern Electronic Materials GeSiSn Nanoislands Epitaxy Diffraction Scanning tunnel microscopy X-ray diffractometry, Photoluminescence Band diagram |
| title | Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures |
| title_full | Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures |
| title_fullStr | Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures |
| title_full_unstemmed | Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures |
| title_short | Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures |
| title_sort | elastically strained gesisn layers and gesisn islands in multilayered periodical structures |
| topic | GeSiSn Nanoislands Epitaxy Diffraction Scanning tunnel microscopy X-ray diffractometry, Photoluminescence Band diagram |
| url | http://www.sciencedirect.com/science/article/pii/S2452177917300610 |
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