A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region

A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region

A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation. Due to the heterojunction diode (HJD) located at the mesa region, the reverse recovery time and reverse reco...

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Bibliographic Details
Main Authors: Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Energies
Subjects:
SiC
MOSFET
heterojunction diode
p-shield region
split-gate
BFOM
Online Access:https://www.mdpi.com/1996-1073/14/24/8582

Internet

https://www.mdpi.com/1996-1073/14/24/8582

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