Special Issue: Nanowire Field-Effect Transistor (FET)

Special Issue: Nanowire Field-Effect Transistor (FET)

This Special Issue looks at recent developments in the research field of Nanowire Field-Effect Transistors (NW-FETs), covering different aspects of technology, physics, and modelling of these nanoscale devices. In this summary, we present seven outstanding articles on NW-FETs by providing a brief ov...

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Bibliographic Details
Main Authors: Natalia Seoane, Antonio García-Loureiro, Karol Kalna
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Materials
Subjects:
nanowire field-effect transistors
metal gate
material properties
fabrication
modelling
variability
Online Access:https://www.mdpi.com/1996-1944/13/8/1845

Internet

https://www.mdpi.com/1996-1944/13/8/1845

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