Special Issue: Nanowire Field-Effect Transistor (FET)
This Special Issue looks at recent developments in the research field of Nanowire Field-Effect Transistors (NW-FETs), covering different aspects of technology, physics, and modelling of these nanoscale devices. In this summary, we present seven outstanding articles on NW-FETs by providing a brief ov...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-04-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/13/8/1845 |
| _version_ | 1797570684313927680 |
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| author | Natalia Seoane Antonio García-Loureiro Karol Kalna |
| author_facet | Natalia Seoane Antonio García-Loureiro Karol Kalna |
| author_sort | Natalia Seoane |
| collection | DOAJ |
| description | This Special Issue looks at recent developments in the research field of Nanowire Field-Effect Transistors (NW-FETs), covering different aspects of technology, physics, and modelling of these nanoscale devices. In this summary, we present seven outstanding articles on NW-FETs by providing a brief overview of the articles’ content. |
| first_indexed | 2024-03-10T20:29:35Z |
| format | Article |
| id | doaj.art-fb443cb94d7740d582ef5a1d4ddea1bc |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T20:29:35Z |
| publishDate | 2020-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-fb443cb94d7740d582ef5a1d4ddea1bc2023-11-19T21:35:33ZengMDPI AGMaterials1996-19442020-04-01138184510.3390/ma13081845Special Issue: Nanowire Field-Effect Transistor (FET)Natalia Seoane0Antonio García-Loureiro1Karol Kalna2Centro Singular de Investigación en Tecnoloxías Intelixentes, University of Santiago de Compostela, 15782 Santiago de Compostela, SpainCentro Singular de Investigación en Tecnoloxías Intelixentes, University of Santiago de Compostela, 15782 Santiago de Compostela, SpainNanoelectronic Devices Computational Group, College of Engineering, Swansea University, Swansea SA1 8EN, Wales, UKThis Special Issue looks at recent developments in the research field of Nanowire Field-Effect Transistors (NW-FETs), covering different aspects of technology, physics, and modelling of these nanoscale devices. In this summary, we present seven outstanding articles on NW-FETs by providing a brief overview of the articles’ content.https://www.mdpi.com/1996-1944/13/8/1845nanowire field-effect transistorsmetal gatematerial propertiesfabricationmodellingvariability |
| spellingShingle | Natalia Seoane Antonio García-Loureiro Karol Kalna Special Issue: Nanowire Field-Effect Transistor (FET) Materials nanowire field-effect transistors metal gate material properties fabrication modelling variability |
| title | Special Issue: Nanowire Field-Effect Transistor (FET) |
| title_full | Special Issue: Nanowire Field-Effect Transistor (FET) |
| title_fullStr | Special Issue: Nanowire Field-Effect Transistor (FET) |
| title_full_unstemmed | Special Issue: Nanowire Field-Effect Transistor (FET) |
| title_short | Special Issue: Nanowire Field-Effect Transistor (FET) |
| title_sort | special issue nanowire field effect transistor fet |
| topic | nanowire field-effect transistors metal gate material properties fabrication modelling variability |
| url | https://www.mdpi.com/1996-1944/13/8/1845 |
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