Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction

Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction

Abstract A vertical GaN power MOSFET featuring an integrated fin-shaped non-junction diode (FDMOS) is proposed to improve reverse conduction and switching characteristics. Its static and dynamic characteristics are studied and analyzed by Sentaurus TCAD simulation. Compared with the conventional MOS...

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Bibliographic Details
Main Authors: Tao Sun, Xiaorong Luo, Jie Wei, Kemeng Yang, Siyu Deng, Zhijia Zhao, Yanjiang Jia, Bo Zhang
Format: Article
Language:English
Published: SpringerOpen 2022-08-01
Series:Nanoscale Research Letters
Subjects:
GaN
Vertical power MOSFET
Reverse conduction
Turn-on voltage
Gate charge
Reverse recovery
Online Access:https://doi.org/10.1186/s11671-022-03717-0

Internet

https://doi.org/10.1186/s11671-022-03717-0

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