Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction
Abstract A vertical GaN power MOSFET featuring an integrated fin-shaped non-junction diode (FDMOS) is proposed to improve reverse conduction and switching characteristics. Its static and dynamic characteristics are studied and analyzed by Sentaurus TCAD simulation. Compared with the conventional MOS...
Main Authors: | Tao Sun, Xiaorong Luo, Jie Wei, Kemeng Yang, Siyu Deng, Zhijia Zhao, Yanjiang Jia, Bo Zhang |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2022-08-01
|
Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | https://doi.org/10.1186/s11671-022-03717-0 |
Similar Items
-
High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss
by: Tao Sun, et al.
Published: (2022-01-01) -
An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance
by: Nilesh Kumar Jaiswal, et al.
Published: (2023-01-01) -
1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
by: Wei He, et al.
Published: (2022-01-01) -
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
by: Kalparupa Mukherjee, et al.
Published: (2020-10-01) -
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
by: Hong Gu, et al.
Published: (2019-01-01)