High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology

This article presents the utilization of the chemical–mechanical polishing (CMP) method to fabricate high-performance N-polar GaN/AlGaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) through layer transfer technology. The nucleation and buffer layers were removed via CM...

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Bibliographic Details
Main Authors: Bohan Guo, Guohao Yu, Li Zhang, Jiaan Zhou, Zheming Wang, Runxian Xing, An Yang, Yu Li, Bosen Liu, Xiaohong Zeng, Zhongkai Du, Xuguang Deng, Zhongming Zeng, Baoshun Zhang
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Crystals
Subjects:
GaN
N-polar
GaN/AlGaN MIS-HEMT
chemical–mechanical polishing (CMP)
layer transfer technology
Online Access:https://www.mdpi.com/2073-4352/14/3/253

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https://www.mdpi.com/2073-4352/14/3/253

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