Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films.

Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films.

RF magnetron-deposited Si\In _2 O _3 :Er films have the structure of the single-crystalline bixbyite bcc In _2 O _3 nanowires bunched into the columns extended across the films. The obtained films have a typical In _2 O _3 optical band gap of 3.55 eV and demonstrate the 1.54 μ m Er ^3+ room temperat...

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Bibliographic Details
Main Authors: K V Feklistov, A G Lemzyakov, I P Prosvirin, A A Gismatulin, A A Shklyaev, Y A Zhivodkov, G К Krivyakin, A I Komonov, А S Kozhukhov, E V Spesivsev, D V Gulyaev, D S Abramkin, A M Pugachev, D G Esaev, G Yu Sidorov
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:Materials Research Express
Subjects:
Silicon
In2O3:Er
thin films
nanowires
photoluminescence
band offset
Online Access:https://doi.org/10.1088/2053-1591/abd06b

Internet

https://doi.org/10.1088/2053-1591/abd06b

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