Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films.
RF magnetron-deposited Si\In _2 O _3 :Er films have the structure of the single-crystalline bixbyite bcc In _2 O _3 nanowires bunched into the columns extended across the films. The obtained films have a typical In _2 O _3 optical band gap of 3.55 eV and demonstrate the 1.54 μ m Er ^3+ room temperat...
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Bibliographic Details
Main Authors: |
K V Feklistov,
A G Lemzyakov,
I P Prosvirin,
A A Gismatulin,
A A Shklyaev,
Y A Zhivodkov,
G К Krivyakin,
A I Komonov,
А S Kozhukhov,
E V Spesivsev,
D V Gulyaev,
D S Abramkin,
A M Pugachev,
D G Esaev,
G Yu Sidorov |
Format: | Article
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Language: | English |
Published: |
IOP Publishing
2020-01-01
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Series: | Materials Research Express
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Subjects: | |
Online Access: | https://doi.org/10.1088/2053-1591/abd06b
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