Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films.
RF magnetron-deposited Si\In _2 O _3 :Er films have the structure of the single-crystalline bixbyite bcc In _2 O _3 nanowires bunched into the columns extended across the films. The obtained films have a typical In _2 O _3 optical band gap of 3.55 eV and demonstrate the 1.54 μ m Er ^3+ room temperat...
Main Authors: | K V Feklistov, A G Lemzyakov, I P Prosvirin, A A Gismatulin, A A Shklyaev, Y A Zhivodkov, G К Krivyakin, A I Komonov, А S Kozhukhov, E V Spesivsev, D V Gulyaev, D S Abramkin, A M Pugachev, D G Esaev, G Yu Sidorov |
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Format: | Article |
Language: | English |
Published: |
IOP Publishing
2020-01-01
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Series: | Materials Research Express |
Subjects: | |
Online Access: | https://doi.org/10.1088/2053-1591/abd06b |
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