Modeling and Investigating Total Ionizing Dose Impact on FeFET
This article presents a novel, simulation-based study of the long-term impact of X-ray irradiation on the ferroelectric field effect transistor (FeFET). The analysis is conducted through accurate multiphysics technology CAD (TCAD) simulations and radiation impact on the two FeFET memory states&#...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10288360/ |