Study of Optoelectronic Properties CdS-Si Heterojunction Prepared by Chemical Bath Deposition Method
CdS-Si heterojunction detector has been prepared by chemical bath deposition method . Structure properties of these films was characterized by X-ray diffraction .CdS films deposited have polycrystalline structure cubic(zinc blende) and hexagonal. The average grain size is 45 nm .The optical properti...
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| Format: | Article |
| Language: | English |
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University of Anbar
2013-08-01
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| Series: | مجلة جامعة الانبار للعلوم الصرفة |
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| Online Access: | https://juaps.uoanbar.edu.iq/article_81182_c63679b25ed7952df2519d4a4b4d4601.pdf |